Browsing by Author "Alles, M.L."

Now showing 1 - 5 of 5

Charge collection mechanisms of Ge-channel bulk pMOSFETs

Samsel, Isaak
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Zhang, E.X.
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Sternberg, A.L.
;
Ni, K.
;
Reed, Robert
;
Fleedwood, Daniel
;
Alles, M.L.
Journal article
2015, IEEE Transactions on Nuclear Science, (62) 6, p.2725-2731
Heavy ion and laser-induced transients in SiGe channel pMOSFETs

Zhang, E.X.
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Samsel, I.K.
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Bennett, W.G.
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Hooten, N.C.
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McCurdy, M.
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Fleetwood, D.M.
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Reed, R.A.
Proceedings paper
2013, International Semiconductors Device Research Symposium, 11/12/2013, p.FA7-03
Heavy-ion-induced current transients in bulk and SOI FinFETs

El-Mamouni, F.
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Zhang, X.
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Ball, D.R.
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Sierawski, B.
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King, M.P.
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Schrimpf, R.D.
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Reed, R.A.
Journal article
2012, IEEE Transactions on Nuclear Science, (59) 6, p.2674-2681
Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates

Gong, H.
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Ni, K.
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Zhang, E.X.
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Sternberg, A. L.
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Kuzub, J.A.
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Alles, M.L.
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Reed, R.
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Fleetwood, D.
Journal article
2019, IEEE Transactions on Nuclear Science, (66) 1, p.376-383
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

Wang, L.
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Zhang, E.X.
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Zhang, C.X.
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Duan, G.X.
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Schrimpf, R.D.
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Fleetwood, D.M.
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Reed, R.A.
Proceedings paper
2015, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 13/07/2015, p.22-25