Browsing by Author "Barbato, M."
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Publication ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
; Banerjee, A.Journal article2019, Microelectronics Reliability, 100, p.113334Publication Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Journal article2017, Microelectronics Reliability, 76-77, p.298-303Publication Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.703-706