Browsing by Author "Bazley, D. J."
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Publication A simulation evaluation of 100 nm CMOS device performance
;Jones, S. K. ;Bazley, D. J. ;Augendre, Emmanuel ;Badenes, Gonçal; Skotnicki, T.Proceedings paper2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD, 5/09/2001, p.288-291Publication Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS
;Bazley, D. J. ;Jones, S. K.Badenes, GonçalProceedings paper1998, Proceedings of the 28th European Solid-State Device Research Conference - ESSDERC, 8/09/1998, p.124-127Publication Characterisation of mechanical stresses of device isolation structures by micro-Raman spectroscopy and modelling
;Jones, S. K. ;Ahmed, M. ;Bazley, D. J. ;Beanland, R. J.; ;Hill, C.Rothwell, W. J.Proceedings paper1999, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 16/09/1999, p.60-75Publication Simulation of advanced-LOCOS capability for sub-0.25 micron CMOS isolation
;Jones, S. K. ;Bazley, D. J. ;Beanland, R. ;Badenes, GonçalScaife, B.Proceedings paper1997, 1997 International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 8/09/1997, p.185-188