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Browsing by Author "Bhuva, B.L."

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    Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

    Mahatme, N.
    ;
    Zhang, E.
    ;
    Reed, R.A.
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    Bhuva, B.L.
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    Schrimpf, R.D.
    ;
    Fleetwood, D.M.
    ;
    Linten, Dimitri  
    Journal article
    2012, IEEE Transactions on Nuclear Science, (59) 6, p.2966-2973
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    Total ionizing dose effects on ultra thin buried oxide floating body memories

    Mahatme, Nihaar
    ;
    Schrimpf, Ronald
    ;
    Reed, Robert
    ;
    Bhuva, B.L.
    ;
    Griffoni, Alessio
    ;
    Simoen, Eddy  
    Proceedings paper
    2012-04, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.MY-3
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    Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs

    Mahatme, Nihaar
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    Zhang, E.X.
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    Linten, Dimitri  
    ;
    Griffoni, A.
    ;
    Aoulaiche, Marc
    ;
    Simoen, Eddy  
    Oral presentation
    2012, IEEE Nuclear and Space Radiation Effects Conference - NSREC

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