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Browsing by Author "Bina, M."

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    A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs

    Illarionov, Yu. Yu.
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    Bina, M.
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    Tyaginov, S. E.
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    Rott, K.
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    Reisinger, H.
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    Kaczer, Ben  
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    Grasser, T.
    Proceedings paper
    2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.XT.13
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    Direct tunneling and gate current fluctuations

    Baumgartner, O.
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    Bina, M.
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    Goes, W.
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    Schanovsky, F.
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    Toledano Luque, Maria
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    Kaczer, Ben  
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    Kosina, H.
    Proceedings paper
    2013, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 3/09/2013, p.17-20
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    Multiphonon processes as the origin of reliability issues

    Goes, Wolfgang
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    Toledano Luque, Maria
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    Schanovsky, F.
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    Bina, M.
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    Baumgartner, O.
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    Kaczer, Ben  
    Proceedings paper
    2013, Semiconductors, Dielectrics, and Materials for Nanoelectronics II, 27/10/2013, p.31-47
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    Understanding correlated drain and gate current fluctuations

    Goes, W.
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    Toledano Luque, Maria
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    Baumgartner, O.
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    Bina, M.
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    Schanovsky, F.
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    Kaczer, Ben  
    ;
    Grasser, T.
    Proceedings paper
    2013, 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 15/07/2013, p.51-56

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