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A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Publication:
A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Illarionov, Yu. Yu.
;
Bina, M.
;
Tyaginov, S. E.
;
Rott, K.
;
Reisinger, H.
;
Kaczer, Ben
;
Grasser, T.
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Abstract
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1899
since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations
Metrics
Views
1899
since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations