Publication:
A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Date
| dc.contributor.author | Illarionov, Yu. Yu. | |
| dc.contributor.author | Bina, M. | |
| dc.contributor.author | Tyaginov, S. E. | |
| dc.contributor.author | Rott, K. | |
| dc.contributor.author | Reisinger, H. | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | Grasser, T. | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.date.accessioned | 2021-10-22T02:11:57Z | |
| dc.date.available | 2021-10-22T02:11:57Z | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/23979 | |
| dc.identifier.url | http://dx.doi.org/10.1109/IRPS.2014.6861190 | |
| dc.source.beginpage | XT.13 | |
| dc.source.conference | International Reliability Physics Symposium - IRPS | |
| dc.source.conferencedate | 1/06/2014 | |
| dc.source.conferencelocation | Waikoloa, HI USA | |
| dc.title | A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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