Browsing by Author "Bina, Markus"
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Publication Degradation of time dependent variability due to interface state generation
Proceedings paper2013, Symposium on VLSI Technology, 11/06/2013, p.T190-T191Publication Extraction of the lateral position of border traps in nanoscale MOSFETs
Journal article2015, IEEE Transactions on Electron Devices, (62) 9, p.2730-2737Publication On the importance of electron-electron scattering for hot-carrier
Journal article2015, Japanese Journal of Applied Physics, (54) 4S, p.04DC18Publication Origins and implications of increased channel hot carrier variability in nFinFETs
; ; ; Proceedings paper2015, IEEE International Reliability Physics Symposium - IRPS, 19/04/2015, p.3B.5Publication Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
Proceedings paper2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.2D.3Publication Simulation of rReliability of nanoscale devices
Proceedings paper2012, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 5/09/2012Publication The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes
Proceedings paper2012, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.5A.2.1-5A.2.6