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Browsing by Author "Blondeel, A."

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    A BEEM study of PtSi Schottky contacts on ion-milled Si

    Ru, Guo-Ping
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    Detavernier, C.
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    Alves Donaton, Ricardo
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    Blondeel, A.
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    Clauws, P.
    Proceedings paper
    1999, Advanced Interconnects and Contacts, 5/04/1999, p.201-206
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    Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Neimash, V. B.
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    Kraitchinskii, A.
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    Kras'ko, N.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Journal article
    2000, Applied Physics Letters, (76) 20, p.2838-2840
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    Defect analysis of n-type silicon strained layers

    Simoen, Eddy  
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    Loo, Roger  
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    Roussel, Philippe  
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    Caymax, Matty  
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    Bender, Hugo  
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    Claeys, Cor
    ;
    Herzog, H. J.
    Journal article
    2001, Materials Science in Semiconductor Processing, 4, p.225-227
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    Defect analysis of n-type silicon strained layers

    Simoen, Eddy  
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    Loo, Roger  
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    Roussel, Philippe  
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    Caymax, Matty  
    ;
    Bender, Hugo  
    ;
    Claeys, C.
    ;
    Herzog, H. J.
    Oral presentation
    2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced Cha
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    Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon

    Simoen, Eddy  
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    Claeys, Cor
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Proceedings paper
    2000, General Scientific Meeting Belgische Natuurkundige Vereniging / Société Belge de Physique, 25/05/2000, p.CM41
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    On the electrical activity of oxygen-related extended defects in silicon

    Vanhellemont, Jan
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    Simoen, Eddy  
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    Bosman, Gijs
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    Claeys, Cor
    ;
    Kaniava, Arvydas
    ;
    Gaubas, Eugenijus
    Proceedings paper
    1994, Proceedings of the 7th International Symposium on Silicon Materials Science and Technology - Semiconductor Silicon/1994, 22/05/1994, p.670-683
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    Spectroscopic study of oxygen related lattice defects in annealed silicon

    Vanhellemont, Jan
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    Libezny, Milan
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    Simoen, Eddy  
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    Claeys, Cor
    ;
    Clauws, P.
    ;
    Blondeel, A.
    Oral presentation
    1994, 22nd International Conference on Physics of Semiconductors
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    Spectroscopic study of oxygen related lattice defects in annealed silicon

    Vanhellemont, Jan
    ;
    Libezny, Milan
    ;
    Simoen, Eddy  
    ;
    Claeys, C.
    ;
    Clauws, P.
    ;
    Blondeel, A.
    Proceedings paper
    1995, 22nd International Conference on the Physics of Semiconductors; 15-19 August 1994; vancouver, BC, Canada., p.2399-402
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    Tin doping effects in silicon

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Neimash, V. B.
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    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Proceedings paper
    2000, High Purity Silicon VI, 22/10/2000, p.223-235
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    Tin doping of silicon for controlling oxygen precipitation and radiation hardness

    Claeys, Cor
    ;
    Simoen, Eddy  
    ;
    Neimash, V. B.
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    Kraitchinskii, A.
    ;
    Krask'o, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Journal article
    2001, Journal of the Electrochemical Society, (148) 12, p.G738-G745
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    Tin-related deep levels in proton-irradiated n-type silicon

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Neimash, V. B.
    ;
    Kraitchinskii, A.
    ;
    Kras'ko, M.
    ;
    Puzenko, O.
    ;
    Blondeel, A.
    Proceedings paper
    2000, Proceedings 2nd ENDEASD Workshop, 27/06/2000, p.147-156

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