Browsing by Author "Bordallo, Caio"
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Publication Analog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation
Publication Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures
Proceedings paper2015, 30th Symposium on Microelectronics Technology and Devices - SBMicro, 31/08/2015, p.1-4Publication Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Proceedings paper2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 3/04/2017, p.109-112Publication Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K
Proceedings paper2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S, 16/10/2017, p.8.2Publication Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
Proceedings paper2016, International Symposium on Functional Diversification of Semiconductor Electronics 3 (More-Than-Moore 3), 29/05/2016, p.73-80Publication Influence of proton radiation and strain on nFinFET zero temperature coefficient
Proceedings paper2016, 31st Symposium on Microelectronics Technology and Devices - SBMicro, 29/08/2016Publication Opposite trends between digital and analog performance for different TFET technologies
Proceedings paper2018, China Semiconductor Technology International Conference - CSTIC, 14/03/2018, p.1-4Publication Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
Publication The impact of the temperature on In0.53Ga0.47As nTFETs
Journal article2018, Nanoelectronic Devices, (18) 1Publication The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs
Journal article2017, IEEE Transactions on Electron Devices, (64) 9, p.3595-3600Publication Vertical nanowire TFET diameter influence on intrinsic voltage gain for different inversion conditions