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Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K
Publication:
Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K
Date
2017
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bordallo, Caio
;
Martino, Joao
;
Agopian, Paula
;
Alian, AliReza
;
Mols, Yves
;
Rooyackers, Rita
;
Vandooren, Anne
;
Verhulst, Anne
;
Simoen, Eddy
;
Claeys, Cor
;
Collaert, Nadine
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1855
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Acq. date: 2025-10-29
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Metrics
Views
1855
since deposited on 2021-10-24
1
last week
Acq. date: 2025-10-29
Citations