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Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K

Date

2017
Proceedings Paper
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dc.contributor.authorBordallo, Caio
dc.contributor.authorMartino, Joao
dc.contributor.authorAgopian, Paula
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T03:05:43Z
dc.date.available2021-10-24T03:05:43Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27897
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8309256/
dc.source.beginpage8.2
dc.source.conferenceIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S
dc.source.conferencedate16/10/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K

dc.typeProceedings paper
dspace.entity.typePublication
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