Browsing by Author "Borniquel, Jose"
Now showing 1 - 2 of 2
- Results per page
- Sort Options
Publication Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantation
Journal article2019, Solid-State Electronics, 152, p.58-64Publication Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment
; ;Carlson, Eric; ;Borniquel, Jose ;Kang, SangWang ;Jun, SungwonMeeting abstract2012, International Workshop on Nitride Semiconductors - IWN, 14/10/2012