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Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment
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1968 since deposited on 2021-10-20
Acq. date: 2025-12-15
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Views
1968 since deposited on 2021-10-20
Acq. date: 2025-12-15
Citations