Publication:
Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment
Date
| dc.contributor.author | Liang, Hu | |
| dc.contributor.author | Carlson, Eric | |
| dc.contributor.author | Zhao, Ming | |
| dc.contributor.author | Borniquel, Jose | |
| dc.contributor.author | Kang, SangWang | |
| dc.contributor.author | Jun, Sungwon | |
| dc.contributor.author | Rosseel, Erik | |
| dc.contributor.author | L'abbe, Caroline | |
| dc.contributor.author | Dekoster, Johan | |
| dc.contributor.imecauthor | Liang, Hu | |
| dc.contributor.imecauthor | Zhao, Ming | |
| dc.contributor.imecauthor | Rosseel, Erik | |
| dc.contributor.imecauthor | Dekoster, Johan | |
| dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
| dc.date.accessioned | 2021-10-20T12:46:03Z | |
| dc.date.available | 2021-10-20T12:46:03Z | |
| dc.date.issued | 2012 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/21025 | |
| dc.source.conference | International Workshop on Nitride Semiconductors - IWN | |
| dc.source.conferencedate | 14/10/2012 | |
| dc.source.conferencelocation | Sapporo Japan | |
| dc.title | Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment | |
| dc.type | Meeting abstract | |
| dspace.entity.type | Publication | |
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