Browsing by Author "Brouwers, Gijs"
Now showing 1 - 3 of 3
- Results Per Page
- Sort Options
Publication Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Journal article2008, Materials Science in Semiconductor Processing, (11) 5_6, p.364-367Publication Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
Journal article2009, Physica Status Solidi C, (6) 8, p.1912-1917Publication Shallow boron implantations in Ge and the role of the pre-amorphization depth
Journal article2008, Materials Science in Semiconductor Processing, (11) 5_6, p.368-371