Browsing by Author "Cantoro, Mirco"
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Publication 6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Meeting abstract2012, AVS 59th Annual International Symposium and Exhibition, 28/10/2012Publication Bandgap opening in oxygen plasma-treated graphene
Journal article2010, Nanotechnology, (21) 43, p.435203Publication Charge transfer effects in graphene-CdSe/ZnS quantum dots composites
Proceedings paper2012-10, Carbon Nanotubes, Graphene, and Associated Devices V, 12/08/2012, p.84620LPublication Charge transfer phenomena in graphene-CdSe/ZnS quantum dots conjugated structures
Meeting abstract2012, Graphene Week, 4/06/2012Publication Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
Journal article2014-08, Nanotechnology, (25) 34, p.345203Publication Controlled III/V nanowire growth by selective-area vapor-phase epitaxy
Journal article2009, Journal of the Electrochemical Society, (156) 11, p.H860-H868Publication Controlled III/V nanowire growth by selective-area vapour phase epitaxy
Proceedings paper2009, Graphene and Emerging Materials for Post-CMOS Applications, 24/05/2009, p.309-329Publication Controlled, selective III, V nanowire heteroepitaxy
Meeting abstract2009, 215th ECS Meeting, 24/05/2009, p.1332Publication Electron accumulation in graphene by interaction with optically excited quantum dots
Journal article2011, Physica E, (43) 5, p.1046-1049Publication Electron accumulation in graphene by interaction with optically excited quantum dots
Meeting abstract2010, JARA-FIT Nanoelectronics Days, 4/10/2010Publication Evolution of optoelectronic properties of graphene under ozone treatment
Oral presentation2011, 22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and NitridesPublication Graphene – CdSe/ZnS quantum dots conjugated systems: charge transfer phenomena and their applications
Proceedings paper2012, Graphene, 10/04/2012, p.107-108Publication Graphene anode junction for CdSe/ZnS quantum dots - based light emitting diodes
Journal article2013, Applied Physics Letters, (103) 4, p.43124Publication Graphene as anode electrode for quantum dot light emitting diodes
Journal article2013, Applied Physics Letters, (103) 4, p.43124Publication Graphene for microelectronics
Oral presentation2009, Graphene Workshop by The IAP-Phase VIPublication Graphene synthesis via intermediate solid state reactions
Proceedings paper2011, Groningen Meets Leuven, 16/06/2011Publication Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
Meeting abstract2012, ECS 222nd Fall Meeting, 7/10/2012, p.3138Publication Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.349-355Publication Impact of the channel thickness on the performance of the ultrathin InGaAs channel MOSFET devices
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.437-440Publication Improving Ion/Ioff in bilayer graphene by molecular functionalization
Meeting abstract2012, ECS 222nd Fall Meeting, 7/10/2012, p.2799
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