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Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
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1928 since deposited on 2021-10-20
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Acq. date: 2026-01-09
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1928 since deposited on 2021-10-20
1last month
1last week
Acq. date: 2026-01-09
Citations