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Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Date

2012
Proceedings Paper
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dc.contributor.authorCantoro, Mirco
dc.contributor.authorMerckling, Clement
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBender, Hugo
dc.contributor.authorMoussa, Alain
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T10:11:37Z
dc.date.available2021-10-20T10:11:37Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20416
dc.source.beginpage349
dc.source.conferenceSiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage355
dc.title

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

dc.typeProceedings paper
dspace.entity.typePublication
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