Browsing by Author "Chin, A."
Now showing 1 - 3 of 3
- Results per page
- Sort Options
Publication Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
Journal article2007-04, IEEE Electron Device Letters, (28) 4, p.258-260Publication Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
;Wang, X.P. ;Li, M.F. ;Yu, HongYu ;Yang, J.J. ;Chen, J.D. ;Zhu, C.X. ;Du, A.Y.Loh, W.Y.Journal article2008, IEEE Electron Device Letters, (29) 1, p.50-53Publication Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
;Wang, X.P. ;Lim, A.E.J. ;Yu, HongYu ;Li, M.F. ;Ren, C. ;Loh, W.Y. ;Zhu, C.X ;Chin, A.Trigg, A.D.Journal article2007, IEEE Trans. Electron Devices, (54) 11, p.2871-2877