Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

Wang, X.P.; Li, M.F.; Yu, HongYu; Yang, J.J.; Chen, J.D.; Zhu, C.X.; Du, A.Y.; Loh, W.Y.; Biesemans, Serge; Chin, A.; Lo, G.Q.; Kwong, D.L.

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Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

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2008

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IEEE Electron Device Letters

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Acq. date: 2026-07-28

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

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