Publication:

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

Date

2008
Journal article
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dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.F.
dc.contributor.authorYu, HongYu
dc.contributor.authorYang, J.J.
dc.contributor.authorChen, J.D.
dc.contributor.authorZhu, C.X.
dc.contributor.authorDu, A.Y.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorChin, A.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-17T12:42:20Z
dc.date.available2021-10-17T12:42:20Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14774
dc.source.beginpage50
dc.source.endpage53
dc.source.issue1
dc.source.journalIEEE Electron Device Letters
dc.source.volume29
dc.title

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

dc.typeJournal article
dspace.entity.typePublication
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