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Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
Publication:
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
Date
2007
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, X.P.
;
Lim, A.E.J.
;
Yu, HongYu
;
Li, M.F.
;
Ren, C.
;
Loh, W.Y.
;
Zhu, C.X
;
Chin, A.
;
Trigg, A.D.
;
Yeo, Y.C.
;
Biesemans, Serge
;
Lo, G.Q.
;
Kwong, D.L.
Journal
IEEE Trans. Electron Devices
Abstract
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1
since deposited on 2021-10-16
Acq. date: 2025-10-23
Views
1950
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Downloads
1
since deposited on 2021-10-16
Acq. date: 2025-10-23
Views
1950
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations