Publication:

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

Date

2007
Journal article
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dc.contributor.authorWang, X.P.
dc.contributor.authorLim, A.E.J.
dc.contributor.authorYu, HongYu
dc.contributor.authorLi, M.F.
dc.contributor.authorRen, C.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorZhu, C.X
dc.contributor.authorChin, A.
dc.contributor.authorTrigg, A.D.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T21:39:11Z
dc.date.available2021-10-16T21:39:11Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13213
dc.source.beginpage2871
dc.source.endpage2877
dc.source.issue11
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume54
dc.title

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

dc.typeJournal article
dspace.entity.typePublication
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