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Browsing by Author "Chiu, Eddie"

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    Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

    Waldron, Niamh  
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    Sioncke, Sonja
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    Franco, Jacopo  
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    Nyns, Laura  
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    Vais, Abhitosh  
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    Zhou, Daisy  
    Proceedings paper
    2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.799-802
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    Novel gate stack engineering for high mobility Ge nFETs

    Arimura, Hiroaki  
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    Cott, Daire  
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    Loo, Roger  
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    Wostyn, Kurt  
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    Boccardi, Guillaume  
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    Franco, Jacopo  
    Meeting abstract
    2018, MRS Spring Meeting, 3/04/2018
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    Observation of plasma-induced damage in bulk germanium p-type FinFET devices and curing in high-pressure anneal

    Hiblot, Gaspard  
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    Arimura, Hiroaki  
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    Witters, Liesbeth  
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    Chiu, Eddie
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    Liu, Yefan  
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    Mitard, Jerome  
    Journal article
    2019, IEEE Transactions on Device and Materials Reliability, (19) 2, p.468-470
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    Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability

    Arimura, Hiroaki  
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    Witters, Liesbeth  
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    Cott, Daire  
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    Dekkers, Harold  
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    Loo, Roger  
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    Mitard, Jerome  
    Proceedings paper
    2017, Symposium on VLSI Technology, 5/06/2017, p.196-197
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    Si-passivated Ge nMOS gate stack with low DIT and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal

    Arimura, Hiroaki  
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    Cott, Daire  
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    Loo, Roger  
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    Vanherle, Wendy  
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    Xie, Qi  
    ;
    Tang, Fu
    ;
    Jiang, Xiaoqiang
    Proceedings paper
    2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.834-837

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