Browsing by Author "Choi, Li Jen"
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Publication A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.655-658Publication A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Proceedings paper2007, Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 10/01/2007, p.158-161Publication Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe: CHBT
Proceedings paper2005, Proceedings 4th International Conference on Silicon Epitaxy and Heterosctructures - ICSI-4, 23/05/2005, p.62-63Publication Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT
Proceedings paper2005-05, International Conference on Silicon Epitaxy and Heterostructures - ICSI, 23/05/2005, p.62-63Publication Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
Journal article2007, Semiconductor Science and Technology, (22) 1, p.S9-S12Publication Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology
Proceedings paper2004-09, Proceedings of the 2004 IEEE Bipolar/Bicmos Circuits and Technology Meeting - BTCM, 13/09/2004, p.229-232Publication On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs
Journal article2007, IEEE Electron Device Letters, (28) 4, p.270-272Publication SiGe HBTs with normal high-speed emitter-up and reverse low-power collector-up operation
Journal article2008, IEEE Transactions on Electron Devices, (55) 1, p.358-364Publication Speed - accuracy trade-off for measurement and characterization of the matching performance of SiGe:C HBTs, applied to a 200 GHz technology
Proceedings paper2005-04, IEEE International Conference on Microelectronic Test Structures, 4/04/2005, p.143-148