Publication:
Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
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1904 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-10
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Views
1904 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-10
Citations