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Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
Publication:
Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Piontek, Andreas
;
Vanhoucke, T.
;
Van Huylenbroeck, Stefaan
;
Choi, Li Jen
;
Hurkx, G.A.M.
;
Hijzen, E.
;
Decoutere, Stefaan
Journal
Semiconductor Science and Technology
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1902
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1902
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations