Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs

dc.contributor.author	Piontek, Andreas
dc.contributor.author	Vanhoucke, T.
dc.contributor.author	Van Huylenbroeck, Stefaan
dc.contributor.author	Choi, Li Jen
dc.contributor.author	Hurkx, G.A.M.
dc.contributor.author	Hijzen, E.
dc.contributor.author	Decoutere, Stefaan
dc.contributor.imecauthor	Van Huylenbroeck, Stefaan
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Van Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-16T18:40:33Z
dc.date.available	2021-10-16T18:40:33Z
dc.date.issued	2007
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/12713
dc.source.beginpage	S9
dc.source.endpage	S12
dc.source.issue	1
dc.source.journal	Semiconductor Science and Technology
dc.source.volume	22
dc.title	Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
dc.type	Journal article
dspace.entity.type	Publication
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