Browsing by Author "Chowdhury, Mohammad Kamruzzaman"
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Publication Factors influencing the leakage current in embedded SiGe source/drain junctions
Journal article2008, IEEE Transactions on Electron Devices, (55) 3, p.925-930Publication Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions
Publication Relaxation induced excess leakage current in recessed Si1-xGex source/drain junctions
Proceedings paper2007, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3: New Materials, Processes and Equipment, 6/05/2007, p.389-396