Browsing by Author "Colombeau, Benjamin"
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Publication A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Proceedings paper2015-06, IEEE Symposium on VLSI Technology, 15/06/2015, p.30-31Publication Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Proceedings paper2013, Symposium on VLSI Technology - VLSIT, 10/06/2013, p.196-197Publication Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Proceedings paper2014, VLSI Technology Symposium, 9/06/2014, p.56-57Publication Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.542-545