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Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Publication:
Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Date
2013
Proceedings Paper
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27453.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sasaki, Yuichiro
;
Godet, Ludovic
;
Chiarella, Thomas
;
Brunco, David
;
Rockwell, Tyler
;
Lee, Jae Woo
;
Colombeau, Benjamin
;
Togo, Mitsuhiro
;
Chew, Soon Aik
;
Zschaetzsch, Gerd
;
Noh, Kyung Bong
;
De Keersgieter, An
;
Boccardi, Guillaume
;
Kim, Min-Soo
;
Hellings, Geert
;
Martin, Patrick
;
Vandervorst, Wilfried
;
Thean, Aaron
;
Horiguchi, Naoto
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1919
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations
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Views
1919
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations