Publication:

Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs

Date

2013
Proceedings Paper
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dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorGodet, Ludovic
dc.contributor.authorChiarella, Thomas
dc.contributor.authorBrunco, David
dc.contributor.authorRockwell, Tyler
dc.contributor.authorLee, Jae Woo
dc.contributor.authorColombeau, Benjamin
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorChew, Soon Aik
dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorNoh, Kyung Bong
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorKim, Min-Soo
dc.contributor.authorHellings, Geert
dc.contributor.authorMartin, Patrick
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorThean, Aaron
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T11:44:20Z
dc.date.available2021-10-21T11:44:20Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23040
dc.source.beginpage542
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
dc.source.endpage545
dc.title

Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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