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Browsing by Author "Considine, L."

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    Chemical mapping of InGaN MQWs

    Sharma, N.
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    Tricker, D.
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    Thomas, P.
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    Bougrioua, Zahia
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    Jacobs, Koen
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    Cheyns, Jan
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    Moerman, Ingrid  
    Journal article
    2001, Journal of Crystal Growth, (230) 3_4, p.438-441
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    Chemical mapping of V-defects in InGaN MQWs

    Sharma, N.
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    Tricker, D. M.
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    Thomas, P. J.
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    Humphreys, C. J.
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    Bougrioua, Zahia
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    Jacobs, Koen
    Oral presentation
    2000, 4th European GaN Workshop - EGW-4
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    Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

    Ruterana, P.
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    Nouet, G.
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    Van der Stricht, Wim
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    Moerman, Ingrid  
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    Considine, L.
    Journal article
    1998, Applied Physics Letters, (72) 14, p.1742-1744
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    Epitaxial lateral overgrowth of GaN by OMVPE

    Jacobs, Koen
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    Van der Stricht, Wim
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    Moerman, Ingrid  
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    Demeester, Piet  
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    Verstuyft, Steven  
    Proceedings paper
    1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.149-152
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    Epitaxial laterial overgrowth of GaN by OMVPE

    Jacobs, Koen
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    Van der Stricht, Wim
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    Moerman, Ingrid  
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    Demeester, Piet  
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    Verstuyft, Steven  
    Proceedings paper
    1998, URSI Forum '98, 10/12/1998, p.32
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    Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography

    McNally, P. J.
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    Tuomi, T.
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    Lowney, D.
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    Jacobs, Koen
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    Danilewsky, A. N.
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    Rantamaki, R.
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    O'Hare, M.
    Journal article
    2001, Physica Status Solidi. A, (185) 2, p.373-382
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    GaN based device structures grown in a close coupled showerhead MOCVD reactor

    Thrush, E. J.
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    Kappers, M. J.
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    Bougrioua, Zahia
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    Davies, R. A.
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    Wallis, R. H.
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    Phillips, W. A.
    Oral presentation
    2001, National Chinese MOCVD Conferenc; October 2001;
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    Growth and in situ monitoring of GaN using IR interference effects

    Considine, L.
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    Thrush, E. J.
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    Crawley, J. A.
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    Jacobs, Koen
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    Van der Stricht, Wim
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    Moerman, Ingrid  
    Journal article
    1998, Journal of Crystal Growth, (195) 1_4, p.192-198
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    High indium content InGaN films and quantum wells

    Van der Stricht, Wim
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    Jacobs, Koen
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    Moerman, Ingrid  
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    Demeester, Piet  
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    Considine, L.
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    Thrush, E. J.
    Proceedings paper
    1998, Nitride Semiconductors, 1/12/1997, p.107-112
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    Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor

    Vanhollebeke, Koen
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    Considine, L.
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    Moerman, Ingrid  
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    Demeester, Piet  
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    Thrush, E. J.
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    Crawley, J. A.
    Journal article
    1998, Journal of Crystal Growth, (195) 1_4, p.644-647
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    InGaN/GaN MQW blue light emitting diodes grown by OMVPE

    Van der Stricht, Wim
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    Jacobs, Koen
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    Caekebeke, Kristien
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    Verstuyft, S.
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    Moerman, Ingrid  
    Proceedings paper
    1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.237-240
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    Laser reflectance monitoring of GaN MOCVD growth

    Stafford, A.
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    Irvine, S. J. C.
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    Bougrioua, Zahia
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    Jacobs, Koen
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    Moerman, Ingrid  
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    Thrush, E.
    Oral presentation
    1999, 1st UK Nitrides Consortium Conference; 24 September 1999; Glasgow, Scotland.
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    Material optimisation for AlGaN/GaN HFET applications

    Bougrioua, Zahia
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    Moerman, Ingrid  
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    Sharma, N.
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    Wallis, R. H.
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    Cheyns, Jan
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    Jacobs, Koen
    Journal article
    2001, Journal of Crystal Growth, (230) 3_4, p.573-578
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    MOVPE growth optimization of high quality InGaN films

    Van der Stricht, Wim
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    Moerman, Ingrid  
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    Demeester, Piet  
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    Considine, L.
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    Trush, E. J.
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    Crawley, J. A.
    Journal article
    1997, MRS Internet Journal of Nitride Semiconductor Research, 2, p.2-16
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    Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

    Stafford, A.
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    Irvine, S. J. C.
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    Bougrioua, Zahia
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    Jacobs, Koen
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    Moerman, Ingrid  
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    Thrush, E. J.
    Journal article
    2000, J. Crystal Growth, 221, p.142-148
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    Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry

    Stafford, A.
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    Irvine, S. J. C.
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    Bougrioua, Zahia
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    Jacobs, Koen
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    Moerman, Ingrid  
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    Thrush, E. J.
    Proceedings paper
    2000, 10th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE-X; 5-9 June 2000; Sapporo, Japan., p.84-85
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    Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire

    McNally, P. J.
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    O'Hare, M.
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    Tuomi, T.
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    Rantamaki, R.
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    Jacobs, Koen
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    Considine, L.
    ;
    Danilewsky, A. N.
    Proceedings paper
    1999, Wide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications, 5/04/1999, p.327-332

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