Browsing by Author "Considine, L."
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Publication Chemical mapping of InGaN MQWs
Journal article2001, Journal of Crystal Growth, (230) 3_4, p.438-441Publication Chemical mapping of V-defects in InGaN MQWs
;Sharma, N. ;Tricker, D. M. ;Thomas, P. J. ;Humphreys, C. J. ;Bougrioua, ZahiaJacobs, KoenOral presentation2000, 4th European GaN Workshop - EGW-4Publication Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
Journal article1998, Applied Physics Letters, (72) 14, p.1742-1744Publication Epitaxial lateral overgrowth of GaN by OMVPE
Proceedings paper1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.149-152Publication Epitaxial laterial overgrowth of GaN by OMVPE
Proceedings paper1998, URSI Forum '98, 10/12/1998, p.32Publication Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography
;McNally, P. J. ;Tuomi, T. ;Lowney, D. ;Jacobs, Koen ;Danilewsky, A. N. ;Rantamaki, R.O'Hare, M.Journal article2001, Physica Status Solidi. A, (185) 2, p.373-382Publication GaN based device structures grown in a close coupled showerhead MOCVD reactor
;Thrush, E. J. ;Kappers, M. J. ;Bougrioua, Zahia ;Davies, R. A. ;Wallis, R. H.Phillips, W. A.Oral presentation2001, National Chinese MOCVD Conferenc; October 2001;Publication Growth and in situ monitoring of GaN using IR interference effects
Journal article1998, Journal of Crystal Growth, (195) 1_4, p.192-198Publication High indium content InGaN films and quantum wells
;Van der Stricht, Wim ;Jacobs, Koen; ; ;Considine, L.Thrush, E. J.Proceedings paper1998, Nitride Semiconductors, 1/12/1997, p.107-112Publication Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor
;Vanhollebeke, Koen ;Considine, L.; ; ;Thrush, E. J.Crawley, J. A.Journal article1998, Journal of Crystal Growth, (195) 1_4, p.644-647Publication InGaN/GaN MQW blue light emitting diodes grown by OMVPE
Proceedings paper1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.237-240Publication Laser reflectance monitoring of GaN MOCVD growth
Oral presentation1999, 1st UK Nitrides Consortium Conference; 24 September 1999; Glasgow, Scotland.Publication Material optimisation for AlGaN/GaN HFET applications
Journal article2001, Journal of Crystal Growth, (230) 3_4, p.573-578Publication MOVPE growth optimization of high quality InGaN films
;Van der Stricht, Wim; ; ;Considine, L. ;Trush, E. J.Crawley, J. A.Journal article1997, MRS Internet Journal of Nitride Semiconductor Research, 2, p.2-16Publication Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Journal article2000, J. Crystal Growth, 221, p.142-148Publication Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry
Proceedings paper2000, 10th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE-X; 5-9 June 2000; Sapporo, Japan., p.84-85Publication Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire
;McNally, P. J. ;O'Hare, M. ;Tuomi, T. ;Rantamaki, R. ;Jacobs, Koen ;Considine, L.Danilewsky, A. N.Proceedings paper1999, Wide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications, 5/04/1999, p.327-332