Browsing by Author "Danilewsky, A. N."
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Publication Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography
;McNally, P. J. ;Tuomi, T. ;Lowney, D. ;Jacobs, Koen ;Danilewsky, A. N. ;Rantamaki, R.O'Hare, M.Journal article2001, Physica Status Solidi. A, (185) 2, p.373-382Publication Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy
;McNally, P. J. ;Curley, J. W. ;Bolt, M. ;Reader, A. ;Tuomi, T. ;Rantamaki, R.Danilewsky, A. N.Journal article1999, J. Materials Science: Materials in Electronics, (10) 5_6, p.351-358Publication Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire
;McNally, P. J. ;O'Hare, M. ;Tuomi, T. ;Rantamaki, R. ;Jacobs, Koen ;Considine, L.Danilewsky, A. N.Proceedings paper1999, Wide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications, 5/04/1999, p.327-332Publication White beam synchroton x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN
;Chen, W. M. ;McNally, P. J. ;Jacobs, Koen ;Tuomi, T. ;Danilewsky, A. N. ;Lowney, D.Kanatharana, J.Oral presentation2001, MRS Fall Meeting 2001: Symposium I: GaN and related alloys; November 26-30, 2001; Boston, MA, USA.