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Browsing by Author "Danilewsky, A. N."

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    Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography

    McNally, P. J.
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    Tuomi, T.
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    Lowney, D.
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    Jacobs, Koen
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    Danilewsky, A. N.
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    Rantamaki, R.
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    O'Hare, M.
    Journal article
    2001, Physica Status Solidi. A, (185) 2, p.373-382
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    Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy

    McNally, P. J.
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    Curley, J. W.
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    Bolt, M.
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    Reader, A.
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    Tuomi, T.
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    Rantamaki, R.
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    Danilewsky, A. N.
    Journal article
    1999, J. Materials Science: Materials in Electronics, (10) 5_6, p.351-358
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    Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire

    McNally, P. J.
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    O'Hare, M.
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    Tuomi, T.
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    Rantamaki, R.
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    Jacobs, Koen
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    Considine, L.
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    Danilewsky, A. N.
    Proceedings paper
    1999, Wide-Bandgap Semiconductors for High-Power, High-Frequency and High- Temperature Applications, 5/04/1999, p.327-332
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    White beam synchroton x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN

    Chen, W. M.
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    McNally, P. J.
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    Jacobs, Koen
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    Tuomi, T.
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    Danilewsky, A. N.
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    Lowney, D.
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    Kanatharana, J.
    Oral presentation
    2001, MRS Fall Meeting 2001: Symposium I: GaN and related alloys; November 26-30, 2001; Boston, MA, USA.

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