Browsing by Author "Dawson, P."
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Publication Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy
;Hamilton, B. ;Ferhah, K. ;Davidson, J. ;Dawson, P. ;Whittaker, E. ;Cheng, T. S.Foxon, C. T.Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131Publication Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
;Duxbury, N. ;Dawson, P. ;Bangert, U. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenJournal article1999, Physica Status Solidi B, (216) 1, p.355-359Publication Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
;Duxbury, N. ;Dawson, P. ;Bangert, U. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenMeeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130Publication Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates
Journal article2008, Journal of Crystal Growth, (310) 23, p.4888-4890Publication Indium segregation in InGaN quantum-well structures
;Duxbury, N. ;Bangert, U. ;Dawson, P. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenJournal article2000, Applied Physics Letters, (76) 12, p.1600-1602