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Browsing by Author "Dawson, P."

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    Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

    Hamilton, B.
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    Ferhah, K.
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    Davidson, J.
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    Dawson, P.
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    Whittaker, E.
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    Cheng, T. S.
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    Foxon, C. T.
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131
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    Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD

    Duxbury, N.
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    Dawson, P.
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    Bangert, U.
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    Thrush, E. J.
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    Van der Stricht, Wim
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    Jacobs, Koen
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.355-359
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    Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

    Duxbury, N.
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    Dawson, P.
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    Bangert, U.
    ;
    Thrush, E. J.
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    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130
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    Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates

    Leys, Maarten
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    Cheng, Kai
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    Derluyn, Joff
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    Degroote, Stefan
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    Germain, Marianne
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    Borghs, Gustaaf  
    Journal article
    2008, Journal of Crystal Growth, (310) 23, p.4888-4890
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    Indium segregation in InGaN quantum-well structures

    Duxbury, N.
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    Bangert, U.
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    Dawson, P.
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    Thrush, E. J.
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    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    2000, Applied Physics Letters, (76) 12, p.1600-1602

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