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Browsing by Author "Deleonibus, S."

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    In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

    Andrieu, F.
    ;
    Ernst, T.
    ;
    Ravit, Claire
    ;
    Jurczak, Gosia  
    ;
    Gibaudo, G.
    ;
    Deleonibus, S.
    Journal article
    2005, IEEE Electron Device Letters, (26) 10, p.755-757
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    Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

    Marchand, B.
    ;
    Cretu, B.
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    Ghibaudo, G.
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    Balestra, F.
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    Blachier, D.
    ;
    Leroux, C.
    ;
    Deleonibus, S.
    Journal article
    2002, Solid-State Electronics, (46) 3, p.337-342

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