Browsing by Author "Deleonibus, S."
Now showing 1 - 2 of 2
- Results per page
- Sort Options
Publication In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs
Journal article2005, IEEE Electron Device Letters, (26) 10, p.755-757Publication Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
;Marchand, B. ;Cretu, B. ;Ghibaudo, G. ;Balestra, F. ;Blachier, D. ;Leroux, C.Deleonibus, S.Journal article2002, Solid-State Electronics, (46) 3, p.337-342