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Browsing by Author "Demeulemeester, J."

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    Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

    Takeuchi, S.
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    Shimura, Y.
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    Nishimura, T.
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    Vincent, Benjamin  
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    Eneman, Geert  
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    Clarysse, Trudo
    Meeting abstract
    2010, 218th ECS Meeting, 10/10/2010, p.1909
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    Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    Vincent, Benjamin  
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    Shimura, Y.
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    Takeuchi, S.
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    Nishimura, T.
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    Demeulemeester, J.
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    Eneman, Geert  
    Meeting abstract
    2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials, 7/06/2010
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    Formation of self-organized nanodots on GaN surface by Ar-ion implantation

    Som, Tapobrata
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    Pereira, L.
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    Skeren, T.
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    Demeulemeester, J.
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    Franquet, Alexis  
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    Temst, K.
    Meeting abstract
    2010, 17th International Conference on Ion Beam Modification of Materials - IBMM, 22/08/2010
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    Formation of self-organized nanodots on GaN surface by Ar-ion implantation

    Som, Tapobrata
    ;
    Pereira, L.
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    Skeren, T.
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    Demeulemeester, J.
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    Franquet, Alexis  
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    Temst, K.
    Oral presentation
    2010, International Conference on Ion Beam Modification of Materials - IBMM
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    GeSn technology: impact of Sn on Ge CMOS applications

    Zaima, S.
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    Nakatsuka, O.
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    Shimura, Y.
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    Adachi, M.
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    Nakamura, M.
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    Takeuchi, S.
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    Vincent, Benjamin  
    Proceedings paper
    2011, ULSI Process Integration 7, 9/10/2011, p.231-238
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    GeSn Technology: Impact of Sn on Ge CMOS Applications

    Zaima, S.
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    Natasuka, O.
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    Shimura, Y.
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    Takeuchi, S.
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    Vincent, Benjamin  
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    Gencarelli, Federica
    Meeting abstract
    2011, 220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7, 9/10/2011, p.2132
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    Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): Nucleation and solid solubility of the monosilicides

    Schrauwen, A.
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    Demeulemeester, J.
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    Deduytsche, D.
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    Devulder, Wouter  
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    Detavernier, C.
    Journal article
    2017, Acta Materialia, 130, p.19-27

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