Browsing by Author "Derluyn, Joff"
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Publication A load-pull wafer-mapper
Proceedings paper2008, IEEE MTT-S International Microwave Symposium Digest, 15/06/2008, p.113-119Publication AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Proceedings paper2008, Optical Sensors 2008, 7/04/2008, p.70030NPublication AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Balachander, KrishnanDegroote, StefanProceedings paper2007, 7th International Conference on Nitride Semiconductors - ICNS-7, 16/09/2007Publication AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Balachander, KrishnanDegroote, StefanJournal article2008, Physica Status Solidi C, (5) 6, p.1600-1602Publication AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range
Proceedings paper2010, Optical Sensing and Detection, 12/04/2010, p.772617Publication AlGaN/GaN HEMT : when MOVPE meets the device challenge
;Germain, Marianne ;Leys, Maarten ;Boeykens, Steven ;Cheng, Kai ;Degroote, StefanDerluyn, JoffProceedings paper2005, Extended Abstracts 11th European Workshop on MOVPE, 5/06/2005, p.367-372Publication AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Proceedings paper2007, 12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII, 3/06/2007Publication AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Degroote, Stefan ;Xiao, DongpingLorenz, AnneJournal article2007-01, Journal of Crystal Growth, 298, p.822-825Publication AlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?
Proceedings paper2007-05, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.277-280Publication AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Journal article2008, Japanese Journal of Applied Physics, (47) 3, p.1553-1555Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
;Srivastava, Puneet ;Das, Jo ;Visalli, Domenica ;Van Hove, MarleenDerluyn, JoffMeeting abstract2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010Publication AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Derluyn, Joff ;Degroote, Stefan ;Leys, Maarten ;Cheng, KaiGermain, MarianneProceedings paper2008, 40th International Conference on Solid State Devices and Materials - SSDM, 23/09/2008Publication AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Van Hove, Marleen ;Derluyn, Joff ;Degroote, Stefan ;Leys, MaartenCheng, KaiJournal article2009, Japanese Journal of Applied Physics, (48) 4, p.04C101Publication AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
;Cheng, Kai ;Degroote, Stefan ;Leys, Maarten ;Medjdoub, Farid ;Derluyn, JoffSijmus, BramJournal article2011, Journal of Crystal Growth, (315) 1, p.204-207Publication ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
;Germain, Marianne ;Leys, Maarten ;Degroote, Stefan ;Cheng, Kai ;Boeykens, StevenDerluyn, JoffOral presentation2005, ESA-CTB Round Table on Wide Bandgap Technologies for Microwave ApplicationPublication Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Journal article2009-12, IEEE Electron Device Letters, (30) 12, p.1308-1310Publication Breakdown voltage mechanisms in AlGaN switching diodes
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.53-55Publication Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors
Journal article2003, Journal of Crystal Growth, (247) 3_4, p.237-244Publication Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Proceedings paper2005, GaN, AlN, InN and Their Alloys, 28/11/2004, p.E8.20Publication Comprehensive MOVPE study of GaAs solar cells using different substrates and group-V precursors
Meeting abstract2002, 11th International Conference on Metalorganic Vapor Phase Epitaxy - MOVPE, 3/06/2002, p.85