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Browsing by Author "Dietrich, B."

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    Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

    Dombrowski, Kai
    ;
    Fischer, A.
    ;
    Dietrich, B.
    ;
    De Wolf, Ingrid  
    ;
    Bender, Hugo  
    ;
    Pochet, Sandrine
    Proceedings paper
    1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.357-360
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    Growth and properties of strained Si1-x-yGexCylayers

    Jain, Suresh
    ;
    Osten, H. J.
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    Dietrich, B.
    ;
    Rücker, H.
    Journal article
    1995, Semiconductor Science and Technology, 10, p.1289-1302
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    Investigation of stress in shallow trench isolation using UV micro-raman spectroscopy

    Dombrowski, Kai
    ;
    Dietrich, B.
    ;
    De Wolf, Ingrid  
    ;
    Rooyackers, Rita
    ;
    Badenes, Gonçal
    Journal article
    2001, Microelectronics Reliability, (41) 4, p.511-515
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    Investigation of stress in STI using UV-Raman spectroscopy

    Dombrowski, Kai
    ;
    Dietrich, B.
    ;
    De Wolf, Ingrid  
    ;
    Rooyackers, Rita
    ;
    Badenes, Gonçal
    Proceedings paper
    1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.196-199
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    Stress measurements using ultraviolet micro-Raman spectroscopy

    Dombrowski, Kai
    ;
    De Wolf, Ingrid  
    ;
    Dietrich, B.
    Journal article
    1999, Appl. Phys. Lett., (75) 16, p.2450-2451
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    Stresses in strained GeSi stripes: calculation and determination from Raman measurements

    Jain, Suresh
    ;
    Dietrich, B.
    ;
    Richter, H.
    ;
    Atkinson, A.
    ;
    Harker, A. H.
    Journal article
    1995, Phys. Rev. B, 52, p.6247-6253

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