Browsing by Author "Dobbie, Andrew"
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Publication Channel backscattering characteristics of high performance germanium pMOSFETs
Proceedings paper2008, 9th International Conference on ULtimate Integration on Silicon - ULIS, 12/03/2008, p.7-10Publication High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
; ; ; Publication High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
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