Browsing by Author "El-Sayed, A."

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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes

Grasser, Tibor
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Waltl, Michael
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Wimmer, Yannick
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Goes, Wolfgang
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Kosik, R.
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Rzepa, Gerhard
Proceedings paper
2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.535-538
Physics-based modeling of hot-carrier degradation in Ge NWFETs

Tyaginov, Stanislav
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Vaisman Chasin, Adrian
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Makarov, A.
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El-Sayed, A.
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Jech, M.
Proceedings paper
2019, International Conference on Solid-State Devices and Materials - SSDM, 2/09/2019, p.565-566