Browsing by Author "Fantini, F."

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Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs

Cova, P.
;
Menozzi, R.
;
Lacey, D.
;
Baeyens, Yves
;
Fantini, F.
Proceedings paper
1995, IEEE 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO; 27 Nov. 1995; Londo, p.98-103
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs

Menozzi, R
;
Borgarino, M.
;
Baeyens, Yves
;
Van Hove, Marleen
;
Fantini, F.
Proceedings paper
1996, Proceedings of the 26th European Solid-State Device Research Conference - ESSDERC, 9/09/1996, p.1009-1012
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's

Menozzi, R.
;
Borgarino, M.
;
Baeyens, Yves
;
Van Hove, Marleen
;
Fantini, F.
Journal article
1997, IEEE Microwave and Guided Wave Letters, (7) 1, p.3-5
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs

Menozzi, R.
;
Borgarino, M.
;
Cova, P.
;
Baeyens, Yves
;
Fantini, F.
Journal article
1996, Microelectronics and Reliability, (36) 11_12, p.1899-1902
The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs

Menozzi, R.
;
Borgarino, M.
;
Baeyens, Yves
;
van der Zanden, Koen
;
Van Hove, Marleen
;
Fantini, F.
Proceedings paper
1997, Indium Phosphide and Related Compounds Conference - IPRM, 11/05/1997, p.153-156