Browsing by Author "Fichtner, Paulo"

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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures

Morschbacher, Mario
;
da Silva, Douglas
;
Fichtner, Paulo
;
Zawislak, Fernando
;
Hollaender, Bernd
Oral presentation
2004, MRS Spring meeting Symposium B: High-Mobility Group-IV Materials and Devices
Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates

Huging, Norbert
;
Luysberg, Martina
;
Urban, Knut
;
Buca, Dan
;
Hollander, Bernd
;
Mantl, Siegfried
Proceedings paper
2005, Nanoelectronic Days 2005, 9/02/2005
Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

Hueging, Norbert
;
Luysberg, Martina
;
Urban, Knut
;
Buca, Dan
;
Hollaender, Bernd
;
Mantl, Siegfried
Proceedings paper
2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.97-102
The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures

Luysberg, Martina
;
Hueging, Norbert
;
Lenk, Steffi
;
Buca, Dan
;
Hollaender, Bernd
Oral presentation
2004, MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices