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Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
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1891 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-10
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Views
1891 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-10
Citations