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Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
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1892 since deposited on 2021-10-16
1last month
Acq. date: 2026-01-25
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Statistics
Views
1892 since deposited on 2021-10-16
1last month
Acq. date: 2026-01-25
Citations