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Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

Date

2005
Proceedings Paper
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dc.contributor.authorHueging, Norbert
dc.contributor.authorLuysberg, Martina
dc.contributor.authorUrban, Knut
dc.contributor.authorBuca, Dan
dc.contributor.authorHollaender, Bernd
dc.contributor.authorMantl, Siegfried
dc.contributor.authorMorschbacher, Marcio
dc.contributor.authorFichtner, Paulo
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T02:13:14Z
dc.date.available2021-10-16T02:13:14Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10623
dc.source.beginpage97
dc.source.conferenceMicroscopy of Semiconducting Materials. Proceedings of the 14th Conference
dc.source.conferencedate11/04/2005
dc.source.conferencelocationOxford UK
dc.source.endpage102
dc.title

Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

dc.typeProceedings paper
dspace.entity.typePublication
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