Browsing by Author "Fobelets, Kristel"
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Publication A GaAs pressure sensor based on resonant tunnelling diodes
Journal article1994, Journal of Micromechanics and Microengineering, (4) 3, p.123-8Publication A time-domain technique for the analysis of non-linear devices and circuits
Proceedings paper1994, Proceedings of the 10th Annual Review of Progress in Applied Computational Electromagnetics; 21-26 March 1994; Monterey, CA, USA, p.569-75Publication Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
Publication Experimental drain current drop-back in GaAs MESFETs
Journal article1995, Electronics Letters, 31, p.2042-2044Publication High-frequency capacitance of bipolar resonant tunneling diodes
Journal article1996, Journal of Applied Physics, (79) 2, p.905-910Publication High-frequency capacitances in resonant interband tunneling diodes
Journal article1994, Appl. Phys. Lett., (64) 19, p.2523-5Publication In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes
Journal article1995, Physical Review B, 52, p.14025-14034Publication Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs
Publication Optimised n-channel Si/Ge HFETs design for VTH shift immunity
Publication Resonant Tunneling Components: Electronic Devices for the Future?
Fobelets, KristelPHD thesis1994-01Publication Transport in the base of a resonant tunneling light-emitting transistor
Proceedings paper1994, Physics and Simulation of Optoelectronic Devices II, 24/01/1994, p.112-120Publication Trap density in Ge-on-Si pMOSFETs with Si intermediate layers
Proceedings paper2011-06, 21st International Conference on Noise and Fluctuations - ICNF, 12/06/2011, p.317-320