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Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs
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Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs
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Date
1998
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fobelets, Kristel
;
Borghs, Gustaaf
Journal
Semiconductor Science and Technology
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1882
since deposited on 2021-09-30
Acq. date: 2026-01-10
Citations
Metrics
Views
1882
since deposited on 2021-09-30
Acq. date: 2026-01-10
Citations