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Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs

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dc.contributor.authorFobelets, Kristel
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-30T11:57:46Z
dc.date.available2021-09-30T11:57:46Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2575
dc.source.beginpage318
dc.source.endpage21
dc.source.issue3
dc.source.journalSemiconductor Science and Technology
dc.source.volume13
dc.title

Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs

dc.typeJournal article
dspace.entity.typePublication
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