Browsing by Author "Gaubas, E."
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Publication Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
Journal article2007, Physica B: Condensed Matter, 401-402, p.222-225Publication Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
; Vanhellemont, J.Journal article2011, Solid State Phenomena, 178-179, p.347-352Publication Electrical and opical characterization of thin semiconductor layers for advanced ULSI devices
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.539-546Publication Excess carrier dynamics in SiGe ultra-thin layers
Journal article2005, Lithuanian Journal of Physics, (45) 5, p.?-?Publication Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Journal article2003, Materials Science and Engineering B, (102) 1_3, p.189-192Publication On the electrical activity of misfit and threading dislocations in P-N junctions fabricated in thin strain-relaxed buffer layers
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.285-290Publication On the impact of metal impurities on the carrier lifetime in n-type germanium
Proceedings paper2007, Semiconductor Defect Engineering - Materials, Synthesis, Structures and Devices II, 9/04/2007, p.0994-F09-06Publication On the recombination activity of oxygen precipitation related lattice defects in silicon
Proceedings paper1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.35-40Publication Study of recombination characteristics in MOCVD grown GaN epi-layers on Si