Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

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Author(s)

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Dobrovoliskas, D.

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Malinauskas, T.

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Meskauskaite, D.

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Miosojedovas, S.

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Mickevicius, J.

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Journal

Semiconductor Science and Technology

Metrics

1927 since deposited on 2021-10-24

Acq. date: 2025-10-23